| PART |
Description |
Maker |
| TLE4945 TLE4945-2L TLE4945L TLE4905 TLE4905L TLE49 |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
Hall Sensors - Unipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC latch (P-SSO-3-2 package)
Bipolar Hall IC Switches for Magnetic Field Applications(用于磁场应用的双极霍尔芯片开
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| U18-G03-K U18L-G03-K U1807 |
BIPOLAR LATCH TYPE HALL-EFFECT FOR HIGH-TEMPERARURE OPERATION
BIPOLAR LATCH TYPE HALL EFFECT
|
Unisonic Technologies
|
| OHS3175U OHN3175U |
Hallogic Bipolar Hall Effect Sensors(Latched)(Hallogic(R) 用于无刷电机的双极霍尔效应传感器，宽电源电压范围,工作温度范围-40 125
Hallogic Bipolar Hall Effect Sensors(Latched)(Hallogic(R) 用于无刷电机的双极霍尔效应传感器，宽电源电压范围,工作温度范围-20 85
HaLLOGIC Bipolar Hall Effect Sensors(Latches)
|
Electronic Theatre Controls, Inc.
Optek Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| BU52040HFV-TR BU52040HFV10 BU52040HFV |
Bipolar Latch Hall IC
|
Rohm
|
| SS539 |
Bipolar Hall-Effect Position Sensor
|
SEC
|
| SS539ESOT SS539EUA SS539KSOT SS539KUA SS539LSOT SS |
Bipolar Hall-Effect Position Sensor
|
SEC Electronics Inc.
|
| OHN3075U |
HALLOGIC BIPOLAR HALL EFFECT SENSORS
|
ETC[ETC]
|
| STK22C48-P45 STK22C48-P45I STK22C48-N20 STK22C48-N |
DIODE TVS 170V 400W UNI 5% SMA
DIODE TVS 17V 400W BIDIR 5% SMA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA RoHS Compliant: Yes
DIODE TVS 100V 400W UNI 5% SMA
DIODE TVS 10V 400W UNI 5% SMA
DIODE TVS 30V 400W BIDIR 5% SMA
NVRAM (EEPROM Based)
DIODE TVS 120V 400W BIDIR 5% SMA
DIODE TVS 300V 400W UNI 5% SMA
DIODE TVS 36V 400W UNI 5% SMA
DIODE TVS 130V 400W UNI 5% SMA
DIODE TVS 180V 400W UNI 5% SMA
DIODE TVS 18V 400W BIDIR 5% SMA
DIODE TVS 200V 400W UNI 5% SMA
DIODE TVS 150V 400W BIDIR 5% SMA NVRAM中（EEPROM的基础
DIODE TVS 20V 400W BIDIR 5% SMA NVRAM中（EEPROM的基础
DIODE TVS 400V 400W UNI 5% SMA NVRAM中（EEPROM的基础
|
ZETTLER electronics GmbH
Electronic Theatre Controls, Inc.
|
| RJK4512DPE-00-J3 RJK4512DPE |
Silicon N Channel MOS FET High Speed Power Switc
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| SK1816-AE3-4-R SK1816-G03-D-K SK1816L-G03-D-K SK18 |
BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION
|
UTC[Unisonic Technologies]
|
| A1230 |
Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch
|
Allegro MicroSystems
|
| SS461C SS361CT |
High Sensitivity Bipolar Latching,Hall-Effect Digital Sensor ICs
|
Honeywell Solid State Electronics Center
|
